Defects in SiO2 and Related Dielectrics: Science and Technology

Defects in SiO2 and Related Dielectrics: Science and Technology

  • Gianfranco Pacchioni
  • Linards Skuja
  • David L. Griscom
Publisher:Springer Science & Business MediaISBN 13: 9789401009447ISBN 10: 9401009449

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Defects in SiO2 and Related Dielectrics: Science and Technology is written by Gianfranco Pacchioni and published by Springer Science & Business Media. It's available with International Standard Book Number or ISBN identification 9401009449 (ISBN 10) and 9789401009447 (ISBN 13).

Silicon dioxide plays a central role in most contemporary electronic and photonic technologies, from fiber optics for communications and medical applications to metal-oxide-semiconductor devices. Many of these applications directly involve point defects, which can either be introduced during the manufacturing process or by exposure to ionizing radiation. They can also be deliberately created to exploit new technologies. This book provides a general description of the influence that point defects have on the global properties of the bulk material and their spectroscopic characterization through ESR and optical spectroscopy.