Phase Change Memory

Phase Change Memory

  • Naveen Muralimanohar
  • Moinuddin K. Qureshi
  • Sudhanva Gurumurthi
  • Bipin Rajendran
Publisher:Springer NatureISBN 13: 9783031017353ISBN 10: 3031017358

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Phase Change Memory is written by Naveen Muralimanohar and published by Springer Nature. It's available with International Standard Book Number or ISBN identification 3031017358 (ISBN 10) and 9783031017353 (ISBN 13).

As conventional memory technologies such as DRAM and Flash run into scaling challenges, architects and system designers are forced to look at alternative technologies for building future computer systems. This synthesis lecture begins by listing the requirements for a next generation memory technology and briefly surveys the landscape of novel non-volatile memories. Among these, Phase Change Memory (PCM) is emerging as a leading contender, and the authors discuss the material, device, and circuit advances underlying this exciting technology. The lecture then describes architectural solutions to enable PCM for main memories. Finally, the authors explore the impact of such byte-addressable non-volatile memories on future storage and system designs. Table of Contents: Next Generation Memory Technologies / Architecting PCM for Main Memories / Tolerating Slow Writes in PCM / Wear Leveling for Durability / Wear Leveling Under Adversarial Settings / Error Resilience in Phase Change Memories / Storage and System Design With Emerging Non-Volatile Memories