Physics and Technology of High-k Gate Dielectrics 6

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Physics and Technology of High-k Gate Dielectrics 6 is written by S. Kar and published by The Electrochemical Society. It's available with International Standard Book Number or ISBN identification 1566776511 (ISBN 10) and 9781566776516 (ISBN 13).

The issue covers in detail all aspects of the physics and the technology of high dielectric constant gate stacks, including high mobility substrates, novel and still higher permittivity dielectric materials, CMOS processing with high-K layers, metals for gate electrodes, interface issues, physical, chemical, and electrical characterization, gate stack reliability, and DRAM and non-volatile memories.