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Physics and Technology of High-k Gate Dielectrics 4 is written by Samares Kar and published by The Electrochemical Society. It's available with International Standard Book Number or ISBN identification 1566775035 (ISBN 10) and 9781566775038 (ISBN 13).
This issue covers, in detail, all aspects of the physics and the technology of high dielectric constant gate stacks, including high mobility substrates, high dielectric constant materials, processing, metals for gate electrodes, interfaces, physical, chemical, and electrical characterization, gate stack reliability, and DRAM and non-volatile memories.