In0.53Ga0.47As MOSFETs with 5 Nm Channel and Self-aligned Source/drain by MBE Regrowth

Know about the book -

In0.53Ga0.47As MOSFETs with 5 Nm Channel and Self-aligned Source/drain by MBE Regrowth is written by Uttam Singisetti and published by . It's available with International Standard Book Number or ISBN identification 1109483570 (ISBN 10) and 9781109483574 (ISBN 13).

A scalable all dry etch gate process with minimal damage to thin channel layers was developed. A ex-situ and in-situ clean of the wafer leaves a contamination free channel surface suitable for epitaxial regrowth. Self-aligned source/drain regions were defined by MBE regrowth. Self-aligned in-situ Mo contacts were defined by 25 nm SiNx sidewalls and a height selective etch. MOSFETs were demonstrated with this process with & sim; 5 nm channel. The source/drain regrowth process is optimized and an InAs source/drain regrowth process was developed. The 200 nm Lg device showed 0.7 mA/mu m peak drive current at Vgs = 4.0 V and Vds = 1.0 V with 2.5 nm EOT and has an on resistance of 600 O -- mum. The technology shows the potential to scale to sub-22nm gate lengths.