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TSV 3D RF Integration is written by Shenglin Ma and published by Elsevier. It's available with International Standard Book Number or ISBN identification 0323996035 (ISBN 10) and 9780323996037 (ISBN 13).
TSV 3D RF Integration: High Resistivity Si Interposer Technology systematically introduces the design, process development and application verification of high-resistivity silicon interpose technology, addressing issues of high frequency loss and high integration level. The book includes a detailed demonstration of the design and process development of Hr-Si interposer technology, gives case studies, and presents a systematic literature review. Users will find this to be a resource with detailed demonstrations of the design and process development of HR-Si interposer technologies, including quality monitoring and methods to extract S parameters. A series of cases are presented, including an example of an integrated inductor, a microstrip inter-digital filter, and a stacked patch antenna. Each chapter includes a systematic and comparative review of the research literature, offering researchers and engineers in microelectronics a uniquely useful handbook to help solve problems in 3D heterogenous RF integration oriented Hr-Si interposer technology. - Provides a detailed demonstration of the design and process development of HR-Si (High-Resistivity Silicon) interposer technology - Presents a series of implementation case studies that detail modeling and simulation, integration, qualification and testing methods - Offers a systematic and comparative literature review of HR-Si interposer technology by topic - Offers solutions to problems with TSV (through silicon via) interposer technology, including high frequency loss and cooling problems - Gives a systematic and accessible accounting on this leading technology